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HGTP2N120CND, HGT1S2N120CNDS
Data Sheet January 2000 File Number 4681.2
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49311.
Features
* 13A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Thermal Impedance SPICE Model Temperature Compensating SABERTM Model www.intersil.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
E
Ordering Information
PART NUMBER HGTP2N120CND HGT1S2N120CNDS PACKAGE TO-220AB TO-263AB BRAND 2N120CND 2N120CND
COLLECTOR (FLANGE)
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120CNDS9A.
Symbol
C
JEDEC TO-263AB
COLLECTOR (FLANGE) G G E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. SABERTM is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
HGTP2N120CND, HGT1S2N120CNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTP2N120CND, HGT1S2N120CNDS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 13 7 20 20 30 13A at 1200V 104 0.83 -55 to 150 300 260 8 UNITS V A A A V V W W/oC oC
oC oC
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 51.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 6.4 13 IGBT and Diode at TJ = 150oC, ICE = 2.6A, VCE = 0.8 BVCES , VGE = 15V, RG = 51, L = 5mH Test Circuit (Figure 20) TYP 100 2.05 2.75 6.7 10.2 30 36 25 11 205 260 425 355 21 11 225 360 800 530 MAX 100 1.0 2.40 3.50 250 36 43 30 15 220 320 590 390 25 15 240 420 1100 580 UNITS V A A mA V V V nA A V nC nC ns ns ns ns J J ns ns ns ns J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF td(ON)I trI td(OFF)I tfI EON EOFF
IC = 2.6A, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 45A, VCE = VGE VGE = 20V TJ = 150oC, RG = 51, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 2.6A, VCE = 0.5 BVCES IC = 2.6A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 25oC, ICE = 2.6A, VCE = 0.8 BVCES , VGE = 15V, RG = 51, L = 5mH Test Circuit (Figure 20)
2
HGTP2N120CND, HGT1S2N120CNDS
Electrical Specifications
PARAMETER Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL VEC trr RJC TEST CONDITIONS IEC = 2.6A IEC = 1A, dlEC/dt = 200A/s IEC = 2.6A, dlEC/dt = 200A/s Thermal Resistance Junction To Case IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. MIN TYP 1.8 31 47 MAX 2.0 35 52 1.20 2.5 UNITS V ns ns
oC/W oC/W
Typical Performance Curves
14 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 15V 12 10 8 6 4 2 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
16 14 12 10 8 6 4 2 0 0
TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
200 400 600 800 1000 1200 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
1400
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
200 fMAX, OPERATING FREQUENCY (kHz)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
TC 100
VGE
VCE = 840V, RG = 51, TJ = 125oC 40 40
75oC 15V 75oC 12V
50
30
30
20 ISC 10 tSC
20
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION TC VGE (DUTY FACTOR = 50%) 110oC 15V ROJC = 1.2oC/W, SEE NOTES 110oC 12V 1 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 5
10
0
10
11
12
13
14
15
0
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
TJ = 150oC, RG = 51, VGE = 15V, L = 5mH
50
50
HGTP2N120CND, HGT1S2N120CNDS Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 10
Unless Otherwise Specified (Continued)
ICE , COLLECTOR TO EMITTER CURRENT (A) 10 DUTY CYCLE <0.5%, VGE = 15V 250s PULSE TEST 8 TC = -55oC TC = 25oC
8 TC = 25oC 6 TC = -55oC 4 TC = 150oC 2 DUTY CYCLE <0.5%, VGE = 12V 250s PULSE TEST 0 0 1 2 3 4 5 6
6 TC = 150oC 4
2
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
900
2000 EON , TURN-ON ENERGY LOSS (J) RG = 51, L = 5mH, VCE = 960V EOFF, TURN-OFF ENERGY LOSS (J)
RG = 51, L = 5mH, VCE = 960V 800 700 TJ = 150oC, VGE = 12V OR 15V 600 500 400 300 200 100 1.0 TJ = 25oC, VGE = 12V OR 15V
1500
TJ = 150oC, VGE = 12V, VGE = 15V
1000
500 TJ = 25oC, VGE = 12V, VGE = 15V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
45 tdI , TURN-ON DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 40 trI , RISE TIME (ns) 35 30 25 20 15 1.0
40 RG = 51, L = 5mH, VCE = 960V 35 30 25 20 15 10 TJ = 25oC, TJ = 150oC, VGE = 15V 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 12V
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
4
HGTP2N120CND, HGT1S2N120CNDS Typical Performance Curves
400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 350 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 150 VGE = 12V, VGE = 15V, TJ = 25oC 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 100 1.0 1.5 2.0 600 500
Unless Otherwise Specified (Continued)
700 RG = 51, L = 5mH, VCE = 960V
TJ = 150oC, VGE = 12V OR 15V
400
300
200 TJ = 25oC, VGE = 12V OR 15V 2.5 3.0 3.5 4.0 4.5 5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
35 30 25 20 15 10 5 0 7
DUTY CYCLE <0.5%, VCE = 20V 250s PULSE TEST
VGE, GATE TO EMITTER VOLTAGE (V)
40
16 14
IG (REF) = 1mA, RL = 260, TC = 25oC VCE = 1200V
12 10 8 VCE = 400V VCE = 800V 6 4 2 0 0 5 10 15 20 25 30
TC = -55oC TC = 25oC 8 9
TC = 150oC 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
90 FREQUENCY = 1MHz 80 C, CAPACITANCE (nF) 70 CIES 60 50 40 30 20 10 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) COES
ICE, COLLECTOR TO EMITTER CURRENT (A)
5
DUTY CYCLE <0.5%, TC = 110oC 250s PULSE TEST
4 VGE = 15V 3 VGE = 10V 2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
HGTP2N120CND, HGT1S2N120CNDS Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.5 t1 0.2 0.1 10-1 0.05 0.02 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
0.01 10-2 10-5
SINGLE PULSE 10-4 10-3 10-2 10-1 100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
70 TC = 25oC, dlEC / dt = 200A/s 60 t, RECOVERY TIME (ns)
20 10 IF , FORWARD CURRENT (A)
50 trr 40
150oC 1
-55oC
30
ta
25oC
20 tb
0.1 0.5
10 1.0 1.5 2.0 VF , FORWARD VOLTAGE (V) 2.5
0
1
2
3
4
5
IF , FORWARD CURRENT (A)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
RHRD4120 90% VGE L = 5mH RG = 51 + VCE 90% VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTP2N120CND, HGT1S2N120CNDS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com 7
ECCOSORBDTM is a trademark of Emerson and Cumming, Inc.

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